2011. 3. 23 1/6 semiconductor technical data KF2N60D/i n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for switching mode power supplies. features h v dss = 600v, i d = 1.9a h r ds(on) =4.4 ? (max) @v gs = 10v h qg(typ) = 6.0nc maximum rating (tc=25 ? ) characteristic symbol rating unit drain-source voltage v dss 600 v gate-source voltage v gss ? 30 v drain current @t c =25 ? i d 1.9 a @t c =100 ? 1.2 pulsed (note1) i dp 4.0 single pulsed avalanche energy (note 2) e as 60 mj repetitive avalanche energy (note 1) e ar 2.3 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 40.3 w derate above 25 ? 0.32 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 3.1 ? /w thermal resistance, junction-to- ambient r thja 110 ? /w g d s pin connection 1. gate 2. drain 3. source dpak (1) dim millimeters a a b b c c d d f ff h g k g j l k l m 0.96 max 0.90 max e e m n h 0.70 min n 123 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ j ipak(1) 123 a a b b c c d d e e f ff g g h h j j l l 0.96 max k m p m n p n k 6.6 0.2 + _ 6.1 0.2 + _ 5.34 0.3 + _ 0.7 0.2 + _ 9.3 0.3 + _ 2.3 0.2 + _ 0.76 0.1 + _ 2.3 0.1 + _ 0.5 0.1 + _ 1.8 0.2 + _ 0.5 0.1 + _ 1.0 0.1 + _ + _ 1.02 0.3 dim millimeters 1. gate 2. drain 3. source (KF2N60D/i) KF2N60D kf2n60i
2011. 3. 23 2/6 KF2N60D/i revision no : 0 electrical characteristics (tc=25 ? ) note 1) repetivity rating : pulse width limited by junction temperature. note 2) l=28mh, i s =2a, v dd =50v, r g =25 ? , starting t j =25 ? . note 3) i s ? 2a, di/dt ? 100a/ k , v dd ? bv dss , starting t j =25 ? . note 4) pulse test : pulse width ? 300 k , duty cycle ? 2%. note 5) essentially independent of operating temperature. 2 product name lot no 1 001 2 kf2n60 d 1 001 2 kf2n60 i 1 marking characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 u , v gs =0v 600 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 u , referenced to 25 ? - 0.6 - v/ ? drain cut-off current i dss v ds =600v, v gs =0v, - - 10 u gate threshold voltage v th v ds =v gs , i d =250 u 2.5 - 4.5 v gate leakage current i gss v gs = ? 30v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =1a - 3.7 4.4 ? dynamic total gate charge q g v ds =480v, i d =2a v gs =10v (note4,5) - 6.0 - nc gate-source charge q gs - 1.0 - gate-drain charge q gd - 2.8 - turn-on delay time t d(on) v dd =300v i d =2a r g =25 ? (note4,5) - 10 - ns turn-on rise time t r - 20 - turn-off delay time t d(off) - 25 - turn-off fall time t f - 20 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 270 - pf output capacitance c oss - 35 - reverse transfer capacitance c rss - 3.9 - source-drain diode ratings continuous source current i s v gs 2011. 3. 23 3/6 KF2N60D/i revision no : 0 normalized breakdown voltage bv dss gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 0 10 -1 10 1 10 0 10 -1 10 -2 10 1 68 410 2 fig2. i d - v gs fig3. bv dss - t j fig4. r ds(on) - i d -100 -50 0.8 0.9 1.2 1.1 1.0 050 100 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ? ) fig5. i s - v sd 0.2 0.4 0.8 1.0 1.2 0.6 1.4 1.6 1.8 reverse drain current i s (a) 12.0 4.0 0 2.0 6.0 10.0 8.0 02.0 1.0 3.0 1.5 0.5 2.5 junction temperature tj ( ) c source - drain voltage v sd (v) 10 0 10 -1 10 1 10 2 fig6. r ds(on) - t j junction temperature t j ( ) 0 50 -100 -50 100 150 normalized on resistance 0.0 0.5 3.0 2.5 1.0 1.5 2.0 c v gs =10v i ds = 1a v gs = 0v i ds = 250 25 c 1100 0.1 10 v gs =10v v gs =7v v gs =10v v gs =6v 25 c t c =100 c t c =100 c v gs =5v
2011. 3. 23 4/6 KF2N60D/i revision no : 0 drain current i d (a) drain - source voltage v ds (v) fig9. safe operation area 10 1 10 1 10 -1 10 0 10 0 10 -2 10 2 10 3 0 0 1.5 0.5 1.0 3.0 3.5 2.5 2.0 75 150 125 50 100 25 drain current i d (a) c junction temperature t j ( ) fig10. i d - t j t c = 25 t j = 150 single pulse c c dc 10ms 1ms 100 s 10 s gate - charge q g (nc) 0 12 10 6 2 4 8 78 3 1 5 4 6 2 0 fig8. q g - v gs gate - source voltage v gs (v) i d =2a fig 7. c - v ds capacitance (pf) v ds = 480v drain - source voltage v ds (v) 1 10 100 1000 05 15 25 35 10 20 30 40 c rss c oss c iss operation in this area is limited by r ds(on) time (sec) fig11. transient thermal response curve transient thermal resistance - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm single pul s e duty=0.5 0.02 0.05 0 .1 0.2 0.01 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 1 10 0
2011. 3. 23 5/6 KF2N60D/i revision no : 0 fig12. gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 ? r l q g q gd q gs q t p fig14. resistive load switching fig13. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss
2011. 3. 23 6/6 KF2N60D/i revision no : 0 fig15. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.5 v dss
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